Cambridge GaN Devices

Cambridge GaN Devices (CGD) operates as a fabless semiconductor company, a business model where it designs and develops its proprietary technology while outsourcing the manufacturing process. This approach allows the company to focus its resources on research and development. Spun out from the University of Cambridge in 2016, the company was co-founded by CEO Dr. Giorgia Longobardi and CTO Professor Florin Udrea. The foundation of CGD is rooted in decades of research in power devices and Gallium Nitride (GaN) reliability conducted at the university. Dr. Longobardi's work has been centered on GaN technologies for efficient power management, and she completed her PhD in collaboration with NXP Semiconductors. Professor Udrea is a seasoned academic and entrepreneur in semiconductor engineering, having founded several successful spin-outs, including Cambridge Semiconductor (Camsemi) and Cambridge CMOS Sensors. The company secured initial seed funding in 2019, followed by a $9.5 million Series A in 2021, and a $32 million Series C in February 2025, bringing total funding to $60 million.

CGD designs and commercializes energy-efficient GaN-based power devices aimed at making electronics more sustainable. The company's business model is centered on selling these advanced semiconductor components to a range of clients in high-growth markets. Its target markets include consumer electronics, data center power supplies, industrial systems, and automotive applications, including electric vehicle (EV) traction inverters and on-board chargers. By providing more efficient power conversion, CGD's products help reduce energy consumption and CO2 emissions. Revenue is generated from the sale of its GaN transistors and integrated circuits to these various sectors.

The company's core product is the ICeGaN™ technology, a proprietary enhancement-mode (eMode) GaN transistor. A key feature of ICeGaN™ is its ability to be operated like a conventional Silicon MOSFET, utilizing standard gate drivers without requiring special circuitry or negative voltages for shutdown. This “ease-of-use” simplifies the integration process for engineers and reduces the need for additional external components. The technology integrates logic and protection circuits directly onto the GaN chip, creating a single-chip solution that enhances reliability and robustness. CGD has launched its H1 and H2 series of ICeGaN™ transistors, which offer significant improvements in energy efficiency, capable of reducing power losses by up to 50% compared to traditional silicon devices. The H2 series further introduces an innovative on-chip circuit that minimizes power loss during light-load and no-load conditions. For the high-power EV market, CGD is developing 'Combo ICeGaN', which combines its GaN HEMTs with traditional IGBTs in a single module to offer a cost-effective and efficient alternative to silicon carbide (SiC) solutions. Keywords: Gallium Nitride, GaN transistors, power electronics, fabless semiconductor, energy efficiency, power devices, ICeGaN, eMode GaN, power conversion, data centers, electric vehicles, consumer electronics, industrial power, automotive semiconductors, switched-mode power supplies, high-voltage microelectronics, GaN-on-Silicon, power management ICs, green electronics, sustainable technology, semiconductor design, power semiconductors, transistor technology, MOSFET replacement, EV inverters, on-board chargers, server power supplies