Global Communication Devices

About Global Communication Devices

Established in 1997, Global Communication Semiconductors, LLC (GCS) operates as a dedicated pure-play compound semiconductor wafer foundry. The company specializes in advanced process technologies using materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC). These materials are foundational for fabricating high-performance Radio Frequency (RF) and millimeter-wave (mmW) devices.

GCS provides foundry services that enable the production of components for sophisticated communication systems and power electronics. Its business model is centered on offering wafer fabrication services to external clients, which include semiconductor companies, system integrators, and research institutions. These clients operate in high-frequency and high-power application sectors like wireless communications, telecommunications, and fiber optics. Revenue is generated by providing these specialized manufacturing capabilities.

The company’s service portfolio includes a variety of technologies such as GaN High Electron Mobility Transistors (HEMT), Gallium Arsenide (GaAs) pseudomorphic HEMTs (pHEMT), and Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBT). GCS supports its clients' design and manufacturing workflows by providing Process Design Kits (PDKs) that come with device models and rule decks for verification. The firm is certified for ISO 9100D & AS9100C and is ITAR registered, indicating its capability to serve stringent market requirements.

Throughout its history, GCS has achieved several technical milestones. In 2008, it developed an advanced InP HBT technology applicable to 40-100G optical communication. The company has engaged in technology transfers and received orders from major international Integrated Device Manufacturers (IDMs) for satellite communications. In 2014, GCS was officially listed on the Taipei Exchange. More recently, it began offering 6-inch VCSEL wafer fab foundry services. In 2021, the company announced new foundry processes including those for mmW HBT, BAW filters, and low voltage GaN/Si applications.