FLOSFIA

FLOSFIA Inc. is a Japanese company that develops and manufactures next-generation power semiconductor devices. Founded in March 2011 as a spin-off from Kyoto University, the company is commercializing corundum-structured gallium oxide (α-Ga2O3) power devices. The foundation of FLOSFIA stems from a discovery made by one of its founding members at Kyoto University's Fujita Laboratory, where a new corundum crystal material was identified. This led to the gathering of members from the university to commercialize the technology. The company is led by President and CEO Toshimi Hitora. FLOSFIA's core technology is the Mist Chemical Vapor Deposition (CVD) method, also known as MISTDRY™, which enables the production of high-quality, high-performance metal oxide films at a low cost without the need for vacuum deposition. This proprietary technology allows the company to develop gallium oxide power devices with superior material potential for reducing energy loss compared to conventional silicon-based power devices. FLOSFIA's α-Ga2O3 power devices aim to achieve lower power loss than silicon carbide (SiC) at a cost comparable to silicon. The company's product lineup includes Schottky Barrier Diodes (SBDs) and it is also developing MOSFETs. These devices are designed to significantly reduce energy loss, cost, size, and weight of power electronics, such as inverters used in electric vehicles (EVs). The company operates on a semi-fabless business model, focusing on its core technology of epitaxy and device design in-house, while outsourcing other parts of the manufacturing process to global partners. This strategy allows for flexibility in meeting market demands. FLOSFIA serves a wide range of markets including automotive, industrial equipment, consumer electronics, and power infrastructure. Key applications for its power devices include EV inverters, AC adapters, robot driver circuits, and power conditioners for solar cells. FLOSFIA has established strategic partnerships with major companies like DENSO, Mitsubishi Heavy Industries, and JSR Corporation to jointly develop and mass-produce its gallium oxide devices. The company has raised significant capital through multiple funding rounds from a variety of investors, including venture capital firms and corporations. Keywords: gallium oxide, power semiconductors, Mist CVD, α-Ga2O3, low-loss power devices, corundum structure, Schottky Barrier Diode, energy efficiency, power electronics, automotive semiconductors, MISTDRY, next-generation semiconductors, electric vehicles, inverters, wide-bandgap semiconductor, Kyoto University spin-off, semi-fabless, epitaxy, power conversion, sustainable technology